{{chembox | Watchedfields = changed | verifiedrevid = 476995238 | ImageFile = Sphalerite-unit-cell-3D-balls.png | IUPACName = Gallium(III) antimonide | OtherNames = Gallium antimonide |Section1={{Chembox Identifiers | ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}} | ChemSpiderID = 3436915 | InChI = 1/Ga.Sb/rGaSb/c1-2 | InChIKey = VTGARNNDLOTBET-KXXLTECTAC | StdInChI_Ref = {{stdinchicite|correct|chemspider}} | StdInChI = 1S/Ga.Sb | StdInChIKey_Ref = {{stdinchicite|correct|chemspider}} | StdInChIKey = VTGARNNDLOTBET-UHFFFAOYSA-N | CASNo_Ref = {{cascite|correct|CAS}} | CASNo = 12064-03-8 | PubChem = 4227894 | SMILES = [Ga]#[Sb] | SMILES1 = [Ga+3].[Sb-3] }} |Section2={{Chembox Properties | Formula = GaSb | MolarMass = 191.483 g/mol | Appearance = | Density = 5.614 g/cm<sup>3</sup> | MeltingPtC = 712 | BoilingPt = | Solubility = insoluble | BandGap = 0.726 eV (300 K) | ElectronMobility = 3000 cm<sup>2</sup>/(V*s) (300 K) | SpecRotation = | MagSus = | ThermalConductivity = 0.32 W/(cm*K) (300 K) | RefractIndex = 3.8 }} |Section3={{Chembox Structure | MolShape = | CrystalStruct = Sphalerite, cF8 | SpaceGroup = F-43m, No. 216 }} |Section7={{Chembox Hazards | MainHazards = | NFPA-H = 1 | NFPA-F = 0 | NFPA-R = 0 | NFPA-S = | FlashPt = Non-flammable }} |Section8={{Chembox Related | OtherAnions = Gallium nitride<br/>Gallium phosphide<br/>Gallium arsenide | OtherCations = }} }} '''Gallium antimonide''' ('''GaSb''') is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about 0.610 nm.<ref name="Vurgaftman2001">{{cite journal |author=Vurgaftman, I. |author2=Meyer, J. R. |author3=Ram-Mohan, L. R. | journal=Journal of Applied Physics | title=Band parameters for III–V compound semiconductors and their alloys | volume=89 | issue=11 | pages=5815–5875 | date=2001 | doi=10.1063/1.1368156| bibcode=2001JAP....89.5815V }}</ref> It has a room temperature direct bandgap of approximately 0.73 eV.<ref name="Vurgaftman2001"></ref><ref name="Dutta1997">{{cite journal |author=Dutta, P. S. |author2=Bhat, H. L. |author3=Kumar, V. | journal=Journal of Applied Physics | title=The physics and technology of gallium antimonide: An emerging optoelectronic material | volume=81 | issue=9 | pages=5821–5870 | date=1997 | doi=10.1063/1.365356| bibcode=1997JAP....81.5821D }}</ref><ref name="Madelung2002">{{cite book |editor=Madelung, O. |editor2=Rössler, U. |editor3=Schulz, M. | date= 2002 | chapter=Gallium antimonide (GaSb), direct energy gap | publisher=Springer-Verlag | series=Landolt-Börnstein - Group III Condensed Matter | volume=b | chapter-url=http://materials.springer.com/lb/docs/sm_lbs_978-3-540-31356-4_229 | doi=10.1007/10832182_229 | isbn=978-3-540-42876-3 | title= Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties | pages= 1–5 }}</ref>
==History== The intermetallic compound GaSb was first prepared in 1926 by Victor Goldschmidt, who directly combined the elements under an inert gas atmosphere and reported on GaSb's lattice constant, which has since been revised. Goldschmidt also synthesized gallium phosphide and gallium arsenide.<ref>{{cite journal|last=Goldschmidt|first=Victor Moritz|journal=Skrifter Norske Videnskaps-Akademi I Oslo|title=Geochemische Verteilungsgesetze der Elemente: 7. Die Gesetze der Krystallochemie|page=29|url=https://publikationen.ub.uni-frankfurt.de/frontdoor/index/index/docId/19275|language=de|year=1926|publisher=I Kommission Hos Jacob Dybwad}}</ref> The Ga-Sb phase equilibria was investigated in 1955 by Koster<ref>{{cite journal | last1=Köster | first1=Werner | last2=Thoma | first2=Berthold | title=Aufbau der Systeme Gallium-Antimon, Gallium-Arsen und Aluminium-Arsen | journal=International Journal of Materials Research | volume=46 | issue=4 | date=1955-04-01 | issn=2195-8556 | doi=10.1515/ijmr-1955-460408 | pages=291–293| bibcode=1955IJMR...46..291K }}</ref> and by Greenfield.<ref>{{cite journal | last1=Greenfield | first1=I. G. | last2=Smith | first2=R. L. | title=Gallium-Antimony System | journal=Transactions AIME | volume=7 | issue=2 | date=1955 | issn=1047-4838 | doi=10.1007/BF03377506 | pages=351–353| bibcode=1955JOM.....7..351G }}</ref>
==Applications== GaSb can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems.
==See also== * Aluminium antimonide * Indium antimonide * Gallium arsenide
==References== {{reflist}}
==External links== * [http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaSb/ properties listed at NSM] {{Webarchive|url=https://web.archive.org/web/20150924035803/http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaSb/ |date=2015-09-24 }}, Ioffe Institute. * [https://web.archive.org/web/20041025234936/http://www.onr.navy.mil/02/matoc/onr/docs/pa1/pa1_005.doc National Compound Semiconductor Roadmap] at the Office of Naval Research
{{Antimonides}} {{Gallium compounds}} {{Antimony compounds}}
Category:III-V semiconductors Category:Gallium compounds Category:Antimonides Category:III-V compounds Category:Zincblende crystal structure