{{Short description|Discontinued computer memory type}} {{Memory types}} thumb|upright|3D Cross Point 2 layer diagram [[File:2018 Pamięć Intel Optane 32GB.jpg|thumb|Intel ''Optane'' in M.2 card format]]
'''3D XPoint''' (pronounced ''three-D cross point'') is a discontinued non-volatile memory (NVM) technology developed jointly by Intel and Micron Technology. It was announced in July 2015 and was available on the open market under the brand name '''Optane''' (Intel) from April 2017 to July 2022.<ref>{{cite web|title=Intel Launches Optane Memory M.2 Cache SSDs for Consumer Market |url= https://www.anandtech.com/show/11227/intel-launches-optane-memory-m2-cache-ssds-for-client-market |archive-url= https://web.archive.org/web/20170327224226/http://www.anandtech.com/show/11227/intel-launches-optane-memory-m2-cache-ssds-for-client-market |url-status= dead |archive-date= March 27, 2017 |website= AnandTech |date=27 March 2017|access-date=13 November 2017}}</ref> Bit storage is based on a change of bulk resistance, in conjunction with a stackable cross-grid data access array, using a technology known as Ovonic Threshold Switch (OTS).<ref name="ee2" /><ref name="ee3" /><ref name="ots" /><ref name="skh" /> Initial prices were less than dynamic random-access memory (DRAM) but more than flash memory.<ref name="hh1">{{cite web |work= Hot Hardware |first= Jason |last= Evangelho |url= http://hothardware.com/news/intel-and-micron-jointly-drop-disruptive-game-changing-3d-xpoint-cross-point-memory-1000x-faster-than-nand |title= Intel and Micron Jointly Unveil Disruptive, Game-Changing 3D XPoint Memory, 1000x Faster than NAND |quote= Intel's Rob Crooke explained, 'You could put the cost somewhere between NAND and DRAM.' |date= July 28, 2015 |access-date= January 21, 2016 |archive-date= August 15, 2016 |archive-url= https://web.archive.org/web/20160815104527/http://hothardware.com/news/intel-and-micron-jointly-drop-disruptive-game-changing-3d-xpoint-cross-point-memory-1000x-faster-than-nand |url-status= dead }}</ref>
As a non-volatile memory, 3D XPoint had a number of features that distinguish it from other currently available RAM and NVRAM. Although the first generations of 3D XPoint were not especially large or fast, 3D XPoint was used to create some of the fastest<ref>{{Cite web|url=https://www.storagereview.com/review/intel-optane-ssd-p5800x-review|title=Intel Optane SSD P5800X Review|date=6 April 2021}}</ref> SSDs available as of 2019, with low write latency. As the memory was inherently fast and byte-addressable, techniques such as read-modify-write and caching used to enhance traditional SSDs are not needed to obtain high performance. In addition, chipsets such as Cascade Lake were designed with inbuilt support for 3D XPoint,{{citation needed|date=September 2021}} which allowed it to be used as a caching or acceleration disk, and it was also fast enough to be used as non-volatile RAM (NVRAM) or persistent memory in a DIMM package.
==History== ===Development=== Development of 3D XPoint began around 2012.<ref name="ee1" /> Intel and Micron had developed other non-volatile phase-change memory (PCM) technologies previously;{{refn|group="note"|Intel and Numonyx presented 64 Gb stackable PCM chips in 2009.<ref name="inummile" />}} Mark Durcan of Micron said 3D XPoint architecture differs from previous offerings of PCM and uses chalcogenide materials for both selector and storage parts of the memory cell that are faster and more stable than traditional PCM materials like GST.<ref name="ee4" /> But today, it is thought of as a subset of ReRAM.<ref name="ee6" /> According to patents, a variety of materials can be used as the chalcogenide material.<ref name="auto1">{{cite web | url=https://www.eetimes.com/patent-search-supports-view-3d-xpoint-based-on-phase-change/?_ga | title=Patent Search Supports View 3D XPoint Based on Phase-Change | date=31 July 2015 }}</ref><ref>{{cite web | url=https://patents.google.com/patent/US8891280B2/en?oq=US8891280 | title=Interconnection for memory electrodes }}</ref><ref name="auto">{{Cite web |last=Choe |first=Jeongdong |date=2017 |title=Process & Architecture |url=https://files.futurememorystorage.com/proceedings/2017/20170808_FR12_Choe.pdf |archive-url=https://web.archive.org/web/20240902193350/https://files.futurememorystorage.com/proceedings/2017/20170808_FR12_Choe.pdf |archive-date=September 2, 2024 |access-date=August 14, 2025 |website=files.futurememorystorage.com}}</ref>
3D XPoint has been stated to use electrical resistance and to be bit addressable.<ref name="extremetech" /> Similarities to the resistive random-access memory under development by Crossbar Inc. have been noted, but 3D XPoint uses different storage physics.<ref name="ee1" /> Specifically, transistors were replaced by threshold switches as selectors in the memory cells.<ref>{{Cite web |title=Can Threshold Switches Replace Transistors in the Memory Cell? |url=https://www.linkedin.com/pulse/can-threshold-switches-replace-transistors-memory-cell-frederick-chen |access-date=2025-08-14 |website=www.linkedin.com |language=en}}</ref><ref>{{Cite web |last=Chen |first=Fred |date=2020-06-08 |title=Can Threshold Switches Replace Transistors in the Memory Cell? |url=https://semiwiki.com/lithography/286317-can-threshold-switches-replace-transistors-in-the-memory-cell/ |access-date=2025-08-14 |website=Semiwiki |language=en-US}}</ref> 3D XPoint developers indicated that it was based on changes in resistance of the bulk material.<ref name="ee2" /> Intel CEO Brian Krzanich responded to ongoing questions on the XPoint material that the switching was based on "bulk material properties".<ref name="ee3" /> Intel has stated that 3D XPoint does not use a phase-change or memristor technology,<ref name="reg1" /> although this is disputed by independent reviewers.<ref>{{cite news|last1=Malventano|first1=Allyn|title=How 3D XPoint Phase-Change Memory Works|url=https://www.pcper.com/reviews/Editorial/How-3D-XPoint-Phase-Change-Memory-Works|access-date=8 June 2017|publisher=PC Perspective|date=2 June 2017}}</ref>
According to reverse engineering firm TechInsights, 3D XPoint used germanium-antimony-tellurium (GST) with low silicon content as the data storage material, which is accessed by ovonic threshold switches (OTSes)<ref>{{cite book | doi=10.1109/IEDM.2009.5424263 | chapter=A stackable cross point Phase Change Memory | title=2009 IEEE International Electron Devices Meeting (IEDM) | date=2009 | last1=Derchang Kau | last2=Tang | first2=Stephen | last3=Karpov | first3=Ilya V. | last4=Dodge | first4=Rick | last5=Klehn | first5=Brett | last6=Kalb | first6=Johannes A. | last7=Strand | first7=Jonathan | last8=Diaz | first8=Aleshandre | last9=Leung | first9=Nelson | last10=Wu | first10=Jack | last11=Sean Lee | last12=Langtry | first12=Tim | last13=Kuo-Wei Chang | last14=Papagianni | first14=Christina | last15=Jinwook Lee | last16=Hirst | first16=Jeremy | last17=Erra | first17=Swetha | last18=Flores | first18=Eddie | last19=Righos | first19=Nick | last20=Castro | first20=Hernan | last21=Spadini | first21=Gianpaolo | pages=1–4 | isbn=978-1-4244-5639-0 }}</ref><ref>{{cite web | url=https://www.eetimes.com/intel-numonyx-claim-phase-change-memory-milestone/?_ga | title=Intel, Numonyx claim phase-change memory milestone | date=28 October 2009 }}</ref> made of ternary phased selenium-germanium-silicon with arsenic doping.<ref name="auto"/><ref name="auto1"/>
3D XPoint was the most widely produced standalone memory based on other than charge storage, whereas other alternative memories, like ReRAM or magnetoresistive RAM, have so far only been widely developed on embedded platforms.<ref>{{Cite web|url=https://semiengineering.com/next-gen-memory-ramping-up/|title=Next-Gen Memory Ramping Up|first=Mark|last=LaPedus|date=August 16, 2018|website=Semiconductor Engineering}}</ref>
===Initial production===<!--incoming Optane, QuantX redirects--> In mid-2015, Intel announced the '''Optane''' brand for storage products based on 3D XPoint technology.<ref name="optane">{{citation | url = http://www.anandtech.com/show/9541/intel-announces-optane-storage-brand-for-3d-xpoint-products | archive-url = https://web.archive.org/web/20150819075640/http://www.anandtech.com/show/9541/intel-announces-optane-storage-brand-for-3d-xpoint-products | url-status = dead | archive-date = August 19, 2015 | work = AnandTech | first = Ryan | last = Smith | date = 18 Aug 2015 | title = Intel Announces Optane Storage Brand For 3D XPoint Products}}</ref> Micron (using the '''QuantX''' brand) estimated the memory to be sold for about half the price of dynamic random-access memory (DRAM), but four to five times the price of flash memory.<ref>{{cite web |title= Micron reveals marketing details about 3D XPoint memory QuantX: Intel, Micron may have made a mistake announcing 3D XPoint a year ago |work= Computer World |date= August 9, 2016 |first= Lucas |last= Mearian |url= http://www.computerworld.com/article/3104675/data-storage/micron-reveals-3d-xpoint-memory-quantx.html |access-date= March 31, 2017 |archive-date= September 6, 2017 |archive-url= https://web.archive.org/web/20170906001500/https://www.computerworld.com/article/3104675/data-storage/micron-reveals-3d-xpoint-memory-quantx.html |url-status= dead }}</ref> Initially, a wafer fabrication facility in Lehi, Utah, operated by IM Flash Technologies LLC (an Intel-Micron joint venture) made small quantities of 128 Gbit chips in 2015. They stack two 64 Gbit planes.<ref name="ee1" /><ref name="ana1" /> In early 2016 mass production of the chips was expected in 12 to 18 months.<ref name="ee5" />
In early 2016, IM Flash announced that the first generation of solid-state drives would achieve 95000 IOPS throughput with 9 microsecond latency.<ref name="ee5">{{citation| url = http://www.eetimes.com/document.asp?doc_id=1328682 | title = 3D XPoint Steps Into the Light| first = Rick| last = Merrick| date = 14 Jan 2016| work = EE Times}}</ref> This low latency significantly increases IOPS at low queue depths for random operations. At Intel Developer Forum 2016, Intel demonstrated PCI Express (PCIe) 140 GB development boards showing 2.4–3× improvement in benchmarks compared to PCIe NAND flash solid-state drives (SSDs).<ref>{{cite news|last1= Cutress |first1= Ian|title= Intel's 140 GB Optane 3D Xpoint PCIe SSD Spotted at IDF |url= http://www.anandtech.com/show/10604/intels-140gb-optane-3d-xpoint-pcie-ssd-spotted-at-idf |archive-url= https://web.archive.org/web/20160827191550/http://www.anandtech.com/show/10604/intels-140gb-optane-3d-xpoint-pcie-ssd-spotted-at-idf |url-status= dead |archive-date= August 27, 2016 |access-date= 26 August 2016 |publisher= Anandtech|date= 26 August 2016}}</ref> On March 19, 2017, Intel announced their first product: a PCIe card available in the second half of 2017.<ref>{{Cite news |title= Intel's first Optane SSD: 375 GB that you can also use as RAM |work= Ars Technica | first = Peter | last = Bright |date= March 19, 2017 |url= https://arstechnica.com/information-technology/2017/03/intels-first-optane-ssd-375gb-that-you-can-also-use-as-ram/ |access-date= March 31, 2017}}</ref><ref>{{Cite news |title= Intel's first hyper-fast 3D drive is meant for servers | first = Jon | last = Figas |date= March 19, 2017 |work= En Gadget |url= https://www.engadget.com/2017/03/19/intel-optane-ssd/ |access-date= March 31, 2017 }}</ref>
===Reception=== [[File:Intel Optane 900p Sequential Steady-state mixed performance graph, from a review by Tom's Hardware.png|thumb|Optane 900p sequential mixed read-write performance, compared to a wide range of well reputed consumer SSDs. The graph shows how traditional SSD's performance drops sharply to around 500–700 MB/s for all but nearly-pure read and write tasks, whereas the 3D XPoint device is unaffected and consistently produces around 2200–2400 MB/s throughput in the same test. Credit: ''Tom's Hardware''.]]
Despite the initial lukewarm reception when first released, 3D XPoint – particularly in the form of Intel's Optane range – has been highly acclaimed and widely recommended for tasks where its specific features are of value, with reviewers such as ''Storage Review'' concluding in August 2018 that for low-latency workloads, 3D XPoint was producing 500,000 4K sustained IOPS for both reads and writes, with 3–15 microsecond latencies, and that at present "there is currently nothing [else] that comes close",<ref>{{cite web|url= https://www.storagereview.com/intel_optane_ssd_dc_p4800x_review |title=Intel Optane SSD DC P4800X Review |date= 31 July 2018 |website= Storage review |access-date=15 April 2019}}</ref> while Tom's Hardware described the Optane 900p in December 2017 as being like a "mythical creature" that must be seen to be believed, and which doubled the speed of the best previous consumer devices.<ref name="TH1">{{cite web|url= https://www.tomshardware.com/reviews/intel-optane-ssd-900p-3d-xpoint,5292-2.html|title=Intel Optane SSD 900P 256GB Performance Testing |date= 4 December 2017 |website= Tom's Hardware|access-date=15 April 2019}}</ref>
ServeTheHome concluded in 2017 that in read, write, and mixed tests, Optane SSDs were consistently around 2.5× as fast as the best Intel data center SSDs that had preceded them, the P3700 NVMe.<ref>{{cite web|url= https://www.servethehome.com/intel-optane-hands-on-real-world-benchmark-and-test-results/ |title=Intel Optane: Hands-on Real World Benchmark and Test Results |first= Cliff |last=Robinson|date=24 April 2017|website= Serve thehome |access-date= 15 April 2019}}</ref> AnandTech noted that consumer Optane-based SSDs were similar in performance to the best non-3D-XPoint SSDs for large transfers, with both being "blown away" by the large transfer performance of enterprise Optane SSDs.<ref>{{cite web|url= https://www.anandtech.com/show/11210/the-intel-optane-memory-ssd-review-32gb-of-kaby-lake-caching |archive-url= https://archive.today/20170514140200/http://www.anandtech.com/show/11210/the-intel-optane-memory-ssd-review-32gb-of-kaby-lake-caching |url-status= dead |archive-date= May 14, 2017 |title= The Intel Optane Memory (SSD) Preview: 32GB of Kaby Lake Caching |first=Billy|last=Tallis |website= Anandtech |access-date=15 April 2019}}</ref>
===Sale of Lehi fab, and discontinuation=== On March 16, 2021, Micron announced that it would cease development of 3D XPoint in order to develop products based on Compute Express Link (CXL), due to a lack of demand.<ref>{{cite web | url=https://www.pcmag.com/news/micron-will-stop-making-3d-xpoint-memory-this-year?amp=true | title=Micron Will Stop Making 3D XPoint Memory This Year | date=17 March 2021 }}</ref><ref>[https://investors.micron.com/news-releases/news-release-details/micron-updates-data-center-portfolio-strategy-address-growing Micron ceases 3D XPoint]</ref> The Lehi fab was never fully utilized and was sold to Texas Instruments for US$900 million.<ref>{{Cite web|url=https://www.anandtech.com/show/16558/micron-abandons-3d-xpoint-memory-technology|archive-url=https://web.archive.org/web/20210316222256/https://www.anandtech.com/show/16558/micron-abandons-3d-xpoint-memory-technology|url-status=dead|archive-date=March 16, 2021|title=Micron Abandons 3D XPoint Memory Technology|first=Billy|last=Tallis|website=www.anandtech.com}}</ref>
Intel responded at the time that its ability to supply Intel Optane products would not be affected.<ref>{{Cite web|url=https://www.tomshardware.com/news/micron-sell-3d-xpoint-fab-stop-development-intel|title=Micron to Sell 3D XPoint Memory Fab and Cease Further Development (Updated)|first=Paul|last=Alcorn|date=March 16, 2021|website=Tom's Hardware}}</ref> However, Intel had already discontinued its consumer line of Optane products in January 2021.<ref>{{cite web|date=2021-01-19|title=Intel quietly kills its face-melting Optane desktop SSDs|url=https://www.pcworld.com/article/3604093/intel-quietly-kills-its-face-melting-optane-desktop-ssds.html |df=mdy-all|access-date=2021-02-15|website=PCWorld|language=en}}</ref> In July 2022, Intel announced the winding down of the Optane division, effectively discontinuing the development of 3D XPoint.<ref>{{cite web | url=https://www.anandtech.com/show/17515/intel-to-wind-down-optane-memory-business | archive-url=https://web.archive.org/web/20220728211218/https://www.anandtech.com/show/17515/intel-to-wind-down-optane-memory-business | url-status=dead | archive-date=July 28, 2022 | title=Intel to Wind Down Optane Memory Business - 3D XPoint Storage Tech Reaches Its End }}</ref><ref>[https://www.theregister.com/2022/07/29/intel_optane_memory_dead/ Why Intel killed its Optane memory business], The Register, 2022-07-22.</ref>
==Compatibility==
Intel makes Optane SSDs,<ref>{{cite web|url=https://www.intel.com/content/www/us/en/support/articles/000025741/memory-and-storage/enthusiast-ssds.html|title=System Requirements for an Intel Optane SSD 900P Series Drive|website=Intel|access-date=15 April 2019}}</ref> Optane Memory, and combined ("Optane Memory with Solid-State Storage") devices. Micron only makes SSDs in the add-in card format, such as the QuantX X100.<ref>{{Cite web|url=https://www.storagereview.com/micron_x100_nvme_ssd_3d_xpoint_unveiled|title=Micron X100 NVMe SSD (3D XPoint) Unveiled {{!}} StorageReview.com - Storage Reviews|date=2019-10-24|website=www.storagereview.com|language=en|access-date=2019-12-18|archive-date=2019-12-18|archive-url=https://web.archive.org/web/20191218054837/https://www.storagereview.com/micron_x100_nvme_ssd_3d_xpoint_unveiled|url-status=dead}}</ref><ref>{{Cite web|url=https://www.micron.com/products/advanced%20solutions/3d%20xpoint%20technology/x100|title=X100|website=www.micron.com|language=en|access-date=2019-12-18|archive-date=2020-07-24|archive-url=https://web.archive.org/web/20200724194832/https://www.micron.com/products/advanced%20solutions/3d%20xpoint%20technology/x100|url-status=dead}}</ref>
===As a standard SSD=== Most Optane devices present themselves as an NVMe solid-state drive (SSD) to the computer. They may connect to the computer using an M.2 format, a U.2 format, or a PCI Express add-in card format. When Optane is used as an ordinary SSD (in any of these formats), its compatibility requirements are the same as for any traditional SSD. Therefore, compatibility depends only upon whether the hardware, operating system, and drivers can support NVMe and similar SSDs—the ability to be plugged into the hardware, operating system, BIOS/UEFI, and driver support for NVMe, and adequate cooling. Optane SSDs are therefore compatible with a wide range of older and newer chipsets and CPUs (including non-Intel chipsets and CPUs.)
===As a cache for a slower drive === Intel markets a small subset of its Optane devices as "Intel Optane Memory," as opposed to the regular "Optane SSD." They too are attached via M.2 and are able to present themselves as an SSD. However, on supported combinations of Intel motherboards (with chipset and BIOS) and CPUs, these devices can also be used as a cache for a slower device.<ref>{{cite web|url=https://www.intel.com/content/www/us/en/support/articles/000023994/memory-and-storage/intel-optane-memory.html|title=Intel Optane Memory: Before You Buy, Key Requirements|website=Intel|access-date=15 April 2019}}</ref>
According to Intel, Optane Memory operates in a mode with lower latency compared to Optane SSDs. Caching is performed by an extension of the Rapid Storage Technology driver, which automatically selects the more frequently used parts of another drive to be included in the cache.<ref>{{cite web |title=Intel® Optane™ Memory M Series Installation and User Guide |url=https://www.intel.com/content/www/us/en/content-details/841206/intel-optane-memory-m-series-installation-and-user-guide.html |website=Intel}}</ref>
(Some early Optane-branded SSDs are regular NAND devices with an Optane cache.)
=== As main memory === Intel markets some "Optane SSDs" with "Intel Memory Drive Technology." These devices use regular PCIe (M.2, U.2, or PCIe AIC) interfaces but, besides presenting themselves as SSDs, are also able to present themselves as main memory given cooperation from the operating system. When used as memory, they are always used as if they are volatile memory; the main benefit is cost.<ref name="DC">{{cite web |title=Intel® Optane™ Technology: Memory or Storage? Both. |url=https://www.intel.com/content/dam/www/public/us/en/documents/product-briefs/optane-dc-persistent-memory-brief.pdf|date=April 2019}}</ref> Good performance can be expected for adding up to 8 times the system's real memory capacity, according to Intel's configuration guide. Earlier Optane SSDs can also be used this way after purchasing a separate license for the MDT software.<ref>{{cite web |title=Intel® Memory Drive Technology Set Up and Configuration Guide Revision 012 |url=https://www.intel.com/content/dam/support/us/en/documents/memory-and-storage/intel-mdt-setup-guide.pdf |date=August 2019}}</ref>
More unusual are the "Optane Persistent Memory" modules (2019) or Data Center Persistent Memory Modules (DCPMMs) that plug into regular DIMM slots, making them NVDIMMs. On supported motherboards, they are directly connected to the CPU's memory controller, like regular memory is. They can be used as if they were volatile memory or in a "persistent memory" mode where they operate like a very fast block device. Up to 512 GB is available as a single module. They are one order of magnitude higher latency than SDRAM, compared to the other Optane options, which have two orders of magnitude of latency difference.<ref name="DC"/><ref>{{cite web |last1=Liu |first1=Sihang |last2=Kanniwadi |first2=Suraaj |last3=Schwarzl |first3=Martin |last4=Kogler |first4=Andreas |last5=Gruss |first5=Daniel |last6=Khan |first6=Samira |title={Side-Channel} Attacks on Optane Persistent Memory |url=https://www.usenix.org/conference/usenixsecurity23/presentation/liu-sihang |pages=6807–6824 |language=en |date=2023}}</ref>
== Using Optane SSDs for memory expansion or disk caching == Although Optane SSDs cannot be used directly by the motherboard and the CPU as extra memory or a disk cache, there have long been operating system mechanisms to use a disk as an expansion of the main memory (swap file) and to use a faster disk as a cache of a slower one (tiered storage). These software mechanisms are typically less performant than mechanisms written into a chipset's firmware, but the performance characteristics of Optane still render it more suitable than regular SSDs.<ref>{{cite web |title=Trying Out Intel Optane Memory On Linux |url=https://www.phoronix.com/review/intel-optane-16gb/2 |website=www.phoronix.com |language=en}}</ref>
A 2023 paper in ''ACM ACCESS'' reports that a system with 4 GB of RAM and 16 GB of Optane SSD swap is more performant than the equivalent system built with a NAND SSD. The bottleneck in Optane SSD swap lies in the Linux block layer, which can be reduced by using zswap (a compressed in-RAM cache for swap). It was also more performant than a system with 8 GB of RAM, 4 of which is compressed with zram.<ref>{{cite journal |last1=Oliveira |first1=Geraldo F. |last2=Ghose |first2=Saugata |last3=Gómez-Luna |first3=Juan |last4=Boroumand |first4=Amirali |last5=Savery |first5=Alexis |last6=Rao |first6=Sonny |last7=Qazi |first7=Salman |last8=Grignou |first8=Gwendal |last9=Thakur |first9=Rahul |last10=Shiu |first10=Eric |author11-link=Onur Mutlu |last11=Mutlu |first11=Onur |title=Extending Memory Capacity in Modern Consumer Systems With Emerging Non-Volatile Memory: Experimental Analysis and Characterization Using the Intel Optane SSD |journal=IEEE Access |date=2023 |volume=11 |pages=105843–105871 |doi=10.1109/ACCESS.2023.3317884|hdl=20.500.11850/635342 |hdl-access=free |doi-access=free}}</ref>
==See also== * Intel Turbo Memory * NAND flash memory * NOR flash memory
==Notes== {{Reflist|group="note"}}
==References== {{Reflist|30em| refs= <ref name="inummile">{{citation| url = http://www.eetimes.com/document.asp?doc_id=1172109 | title = Intel, Numonyx claim phase-change memory milestone| date = 28 Oct 2009| work = EE Times | first = Dylan | last = McGrath}}</ref> <ref name="ana1">{{citation| url = http://www.anandtech.com/show/9541/intel-announces-optane-storage-brand-for-3d-xpoint-products | archive-url = https://web.archive.org/web/20150819075640/http://www.anandtech.com/show/9541/intel-announces-optane-storage-brand-for-3d-xpoint-products | url-status = dead | archive-date = August 19, 2015 | title = Intel Announces Optane Storage Brand For 3D XPoint Products | first = Ryan| last = Smith | quote = products will be available in 2016, in both standard SSD (PCIe) form factors for everything from Ultrabooks to servers, and in a DIMM form factor for Xeon systems for even greater bandwidth and lower latencies. As expected, Intel will be providing storage controllers optimized for the 3D XPoint memory | date = 18 August 2015 | work = Anandtech}}</ref> <ref name="reg1">{{cite web|title= Just ONE THOUSAND times BETTER than FLASH! Intel, Micron's amazing claim| url= https://www.theregister.co.uk/2015/07/28/intel_micron_3d_xpoint/ |website=The Register |date = 28 July 2015 |quote = An Intel spokesperson categorically denied that it was a phase-change memory process or a memristor technology. Spin-transfer torque was also dismissed| first = Chris| last = Mellor}}</ref> <ref name="ee1">{{citation| url = http://www.eetimes.com/document.asp?doc_id=1327289 | title = Intel, Micron Launch "Bulk-Switching" ReRAM| first = Peter | last = Clarke | date = 28 July 2015 | work = EE Times}}</ref> <ref name="ee2">{{citation| url = http://www.eetimes.com/document.asp?doc_id=1327289 | title = Intel, Micron Launch "Bulk-Switching" ReRAM | date = 28 July 2015| work = EE Times | first = Peter | last = Clarke | quote ="The switching mechanism is via changes in resistance of the bulk material," was all Intel would add in response to questions sent via email.}}</ref> <ref name="ee3">{{citation| url = http://www.eetimes.com/document.asp?doc_id=1327478 | page= 2 | title =Intel's Krzanich: CEO Q&A at IDF | work = EE Times |first = Rick| last = Merrick }}</ref> <ref name="ee4">{{citation| url = http://www.eetimes.com/author.asp?section_id=36&doc_id=1327313 | title = Patent Search Supports View 3D XPoint Based on Phase-Change| first = Peter| last = Clarke | date = 31 July 2015| work = EE Times}}</ref> <ref name="ots">{{citation| url = https://www.researchgate.net/publication/377333309 | title = Chalcogenide Ovonic Threshold Switching Selector| first = Zihao| last = Zhao | date = 11 January 2024| work = Research Gate | volume = 16| issue = 1| article-number = 81| doi = 10.1007/s40820-023-01289-x| pmid = 38206440| pmc = 10784450| bibcode = 2024NML....16...81Z| quote =The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch (OTS).}}</ref> <ref name="skh">{{citation| url = https://news.skhynix.com/how-selector-only-memory-emerged-as-the-leading-solution-for-cxl/ | title = How Selector-Only Memory Emerged as the Leading Solution for CXL | date = 30 May 2023 | quote = 3DXP cell stack consists of a thick PCM, an ovonic threshold switch (OTS), and multiple electrodes }}</ref> <ref name="ee6">{{cite web|title= Partnership Puts ReRAM in SSDs |url= https://www.eetimes.com/document.asp?doc_id=1332348 |website= EE Times|date=2017-09-27}} </ref> <ref name="extremetech">{{cite web|url= http://www.extremetech.com/extreme/211087-intel-micron-reveal-xpoint-a-new-memory-architecture-that-claims-to-outclass-both-ddr4-and-nand |title=Intel, Micron reveal Xpoint, a new memory architecture that could outclass DDR4 and NAND |work=ExtremeTech| date = 29 July 2015| first = Joel| last = Hruska}}</ref> }}
==External links== * {{YouTube|VsioS35D-HY|Intel Micron Webcast}}, 44 minutes
{{Intel}} {{Primary storage technologies}}
Category:Computer memory Category:Intel products Category:Non-volatile random-access memory