{{Short description|Semiconductor}} {{More citations needed|date=July 2022}}

'''Indium gallium phosphide''' ('''InGaP'''), also called gallium indium phosphide (GaInP), is a [[semiconductor]] composed of [[indium]], [[gallium]] and [[phosphorus]]. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors [[silicon]] and [[gallium arsenide]].

It is used mainly in [[HEMT]] and [[Heterojunction bipolar transistor|HBT]] structures, but also for the fabrication of high efficiency [[solar cells]] used for space applications and, in combination with [[aluminium]] ([[Aluminium gallium indium phosphide|AlGaInP]] alloy) to make high brightness [[LED]]s with orange-red, orange, yellow, and green colors. Some semiconductor devices such as EFluor Nanocrystal use InGaP as their core particle.

Indium gallium phosphide is a solid solution of [[indium phosphide]] and [[gallium phosphide]].

Ga<sub>0.5</sub>In<sub>0.5</sub>P is a solid solution of special importance, which is almost lattice matched to [[GaAs]]. This allows, in combination with (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>0.5</sub>In<sub>0.5</sub>, the growth of [[Lattice constant|lattice matched]] [[quantum well]]s for red emitting [[Laser diode|semiconductor lasers]], e.g., [[red]] [[Solid-state lighting|emitting]] (650[[1 E-9 m|nm]]) [[RCLED]]s or [[VCSEL]]s for [[Poly(methyl methacrylate)|PMMA]] [[plastic]] [[optical fiber]]s.

Ga<sub>0.5</sub>In<sub>0.5</sub>P is used as the high energy junction on double and triple junction photovoltaic cells grown on [[GaAs]]. Recent years have shown GaInP/GaAs tandem solar cells with AM0 (sunlight incidence in space = 1.35&nbsp;kW/m<sup>2</sup>) efficiencies in excess of 25%.<ref>{{cite web |url=http://www.cam.uh.edu/MQW%20tech%202p.php |title=Multi-Quantum Well Tandem Solar Cells|publisher=University of Houston Center for Advanced Materials |access-date=2008-11-14 |url-status=dead |archive-url=https://web.archive.org/web/20090510015749/http://www.cam.uh.edu/MQW%20tech%202p.php|author=Alex Freundlich |archive-date=2009-05-10 }}</ref>

A different composition of GaInP, lattice matched to the underlying [[GaInAs]], is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells.

Growth of GaInP by [[epitaxy]] can be complicated by the tendency of GaInP to grow as an ordered material, rather than a truly random solid solution (i.e., a mixture). This changes the bandgap and the electronic and optical properties of the material.

==See also== * [[Gallium phosphide]] * [[Indium(III) phosphide]] * [[Indium gallium nitride]] * [[Indium gallium arsenide]] * [[GaInP/GaAs solar cell]]

==References== <references/> * E.F. Schubert "Light emitting diodes", {{ISBN|0-521-53351-1}}

==External links== * [https://web.archive.org/web/20071015042018/http://www.emcore.com/product/adv_triple_junction.php EMCORE Solar Cells] * [https://web.archive.org/web/20071213024152/http://www.spectrolab.com/prd/space/cell-main.asp Spectrolab Solar Cells] * [http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaInP/index.html NSM Archive] {{Webarchive|url=https://web.archive.org/web/20151019085250/http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaInP/index.html |date=2015-10-19 }}

{{Gallium compounds}} {{Phosphides}}

[[Category:Phosphides]] [[Category:Indium compounds]] [[Category:Gallium compounds]] [[Category:III-V semiconductors]] [[Category:III-V compounds]] [[Category:Solar cells]] [[Category:Light-emitting diode materials]]

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