# Random-access memory

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Form of computer data storage

"RAM" redirects here. For other uses, see [RAM (disambiguation)](/source/RAM_(disambiguation)).

Not to be confused with [Random Access Memories](/source/Random_Access_Memories) or [Random-access machine](/source/Random-access_machine).

Example of [writable](/source/Read%2Fwrite_memory) [volatile](/source/Volatile_memory) random-access memory: Synchronous [dynamic RAM](/source/Dynamic_RAM) [modules](/source/DIMM), primarily used as main memory in [personal computers](/source/Personal_computers), [workstations](/source/Workstation), and [servers](/source/Server_(computing)).

Computer memory and data storage types General Memory cell Memory coherence Cache coherence Memory hierarchy Memory access pattern Memory map Secondary storage MOS memory floating-gate Continuous availability Areal density (computer storage) Block (data storage) Object storage Direct-attached storage Network-attached storage Storage area network Block-level storage Single-instance storage Data Structured data Unstructured data Big data Metadata Data compression Data corruption Data cleansing Data degradation Data integrity Data security Data validation Data validation and reconciliation Data recovery Storage Data cluster Directory Shared resource File sharing File system Clustered file system Distributed file system Distributed file system for cloud Distributed data store Distributed database Database Data bank Data storage Data store Data deduplication Data structure Data redundancy Replication (computing) Memory refresh Storage record Information repository Knowledge base Computer file Object file File deletion File copying Backup Core dump Hex dump Data communication Information transfer Temporary file Copy protection Digital rights management Volume (computing) Boot sector Master boot record Volume boot record GUID Partition Table Disk array Disk image Disk mirroring Disk aggregation Disk partitioning Memory segmentation Locality of reference Logical disk Storage virtualization Virtual memory Memory-mapped file Software entropy Software rot In-memory database In-memory processing Persistence (computer science) Persistent data structure RAID Non-RAID drive architectures Memory paging Bank switching Grid computing Cloud computing Cloud storage Fog computing Edge computing Dew computing The law Martiels law Volatile RAM Hardware cache CPU cache Scratchpad memory DRAM eDRAM SDRAM SGRAM DDR GDDR LPDDR QDRSRAM EDO DRAM XDR DRAM RDRAM HBM SRAM 1T-SRAM ReRAM QRAM Content-addressable memory (CAM) Computational RAM VRAM Dual-ported RAM Video RAM (dual-ported DRAM) Historical DC3MWCP (1946–1947) Delay-line memory (1947) Mellon optical memory (1951) Selectron tube (1952) Dekatron T-RAM (2009) Z-RAM (2002–2010) Non-volatile ROM Diode matrix MROM PROM EPROM EEPROM ROM cartridge Solid-state storage (SSS) Flash memory is used in: Solid-state drive (SSD) Solid-state hybrid drive (SSHD) USB flash drive IBM FlashSystem Flash Core Module Memory card Memory Stick CompactFlash PC Card MultiMediaCard SD card SIM card SmartMedia Universal Flash Storage SxS MicroP2 XQD card Programmable metallization cell NVRAM Memistor Memristor PCM (3D XPoint) MRAM Electrochemical RAM (ECRAM) Nano-RAM CBRAM Early-stage NVRAM FeRAM ReRAM FeFET memory Analog recording Phonograph cylinder Phonograph record Quadruplex videotape Vision Electronic Recording Apparatus Magnetic recording Magnetic storage Magnetic tape Magnetic-tape data storage Tape drive Tape library Digital Data Storage (DDS) Videotape Cassette tape Linear Tape-Open Betamax 8 mm video format DV MiniDV MicroMV U-matic VHS S-VHS VHS-C D-VHS Hard disk drive Optical 3D optical data storage Optical disc LaserDisc Compact Disc Digital Audio (CDDA) CD CD Video CD-R CD-RW Video CD Super Video CD Mini CD Nintendo optical discs CD-ROM Hyper CD-ROM DVD DVD+R DVD-Video DVD card DVD-RAM MiniDVD HD DVD Blu-ray Ultra HD Blu-ray Holographic Versatile Disc WORM In development CBRAM Racetrack memory NRAM Millipede memory ECRAM Patterned media Holographic data storage Electronic quantum holography 5D optical data storage DNA digital data storage Universal memory Time crystal Quantum memory UltraRAM Historical Paper data storage (1725) Punched card (1725) Punched tape (1725) Plugboard Drum memory (1932) Magnetic-core memory (1949) Plated-wire memory (1957) Core rope memory (1960s) Thin-film memory (1962) Disk pack (1962) Twistor memory (~1968) Bubble memory (~1970) Floppy disk (1971) v t e

 A 64 bit memory chip die, the SP95 Phase 2 buffer memory produced at IBM mid-1960s, versus [memory core iron rings](/source/Magnetic-core_memory)

8GB [DDR3](/source/DDR3) RAM stick with a white [heatsink](/source/Heatsink)

**Random-access memory** (**RAM**; [/ræm/](https://en.wikipedia.org/wiki/Help:IPA/English)) is a form of [electronic computer memory](/source/Computer_memory) that can be read and changed in any order, typically used to store working [data](/source/Data_(computing)) and [machine code](/source/Machine_code).[1][2] A [random-access](/source/Random_access) memory device allows data items to be [read](/source/Read_(computer)) or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as [hard disks](/source/Hard_disk) and [magnetic tape](/source/Magnetic_tape_data_storage)), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.

In modern technology, random-access memory takes the form of [integrated circuit](/source/Integrated_circuit) (IC) chips with [MOS](/source/MOSFET) (metal–oxide–semiconductor) [memory cells](/source/Memory_cell_(computing)). RAM is normally associated with [volatile](/source/Volatile_memory) types of memory where stored information is lost if power is removed. The two main types of volatile random-access [semiconductor memory](/source/Semiconductor_memory) are [static random-access memory](/source/Static_random-access_memory) (SRAM) and [dynamic random-access memory](/source/Dynamic_random-access_memory) (DRAM).

Non-volatile RAM has also been developed[3] and other types of [non-volatile memories](/source/Non-volatile_memory) allow random access for read operations, but either do not allow write operations or have other kinds of limitations. These include most types of [ROM](/source/ROM) and [NOR flash memory](/source/NOR_flash_memory).

The use of semiconductor RAM dates back to 1965 when IBM introduced the monolithic (single-chip) 16-bit SP95 SRAM chip for their [System/360 Model 95](/source/IBM_System%2F360) computer, and [Toshiba](/source/Toshiba) used bipolar DRAM memory cells for its 180-bit Toscal BC-1411 [electronic calculator](/source/Electronic_calculator), both based on [bipolar transistors](/source/Bipolar_transistor). While it offered higher speeds than [magnetic-core memory](/source/Magnetic-core_memory), bipolar DRAM could not compete with the lower price of the then-dominant magnetic-core memory.[4] In 1966, Dr. [Robert Dennard](/source/Robert_Dennard) invented modern DRAM architecture in which there's a single MOS transistor per capacitor.[5] The first commercial DRAM IC chip, the 1K [Intel 1103](/source/Intel_1103), was introduced in October 1970. [Synchronous dynamic random-access memory](/source/Synchronous_dynamic_random-access_memory) (SDRAM) was reintroduced with the [Samsung](/source/Samsung_Electronics) KM48SL2000 chip in 1992.

## History

These IBM [tabulating machines](/source/Tabulating_machine) from the mid-1930s used [mechanical counters](/source/Mechanical_counter) to store information.

Early computers used [relays](/source/Relay), [mechanical counters](/source/Mechanical_counter)[6] or [delay lines](/source/Delay-line_memory) for main memory functions. Ultrasonic delay lines were [serial devices](/source/Bit-serial_architecture) which could only reproduce data in the order it was written. [Drum memory](/source/Drum_memory) could be expanded at relatively low cost but efficient retrieval of memory items requires knowledge of the physical layout of the drum to optimize speed. Latches built out of [triode vacuum tubes](/source/Triode_vacuum_tube), and later, out of [discrete transistors](/source/Discrete_transistor), were used for smaller and faster memories such as [registers](/source/Hardware_register). Such registers were relatively large and too costly to use for large amounts of data; generally, only a few dozen or few hundred [bits](/source/Bit) of such memory could be provided.

The first practical form of random-access memory was the [Williams tube](/source/Williams_tube). It stored data as electrically charged spots on the face of a [cathode-ray tube](/source/Cathode-ray_tube). Since the electron beam of the CRT could read and write the spots on the tube in any order, memory was random access. The capacity of the Williams tube was a few hundred to around a thousand bits, but it was much smaller, faster, and more power-efficient than using individual vacuum tube latches. Developed at the [University of Manchester](/source/Victoria_University_of_Manchester) in England, the Williams tube provided the medium on which the first electronically stored program was implemented in the [Manchester Baby](/source/Manchester_Baby) computer, which first successfully ran a program on 21 June, 1948.[7] In fact, rather than the Williams tube memory being designed for the Baby, the Baby was a [testbed](/source/Testbed) to demonstrate the reliability of the memory.[8][9]

[Magnetic-core memory](/source/Magnetic-core_memory) was invented in 1947 and developed up until the mid-1970s. It became a widespread form of random-access memory, relying on an array of magnetized rings. By changing the sense of each ring's magnetization, data could be stored with one bit stored per ring. Since every ring had a combination of address wires to select and read or write it, access to any memory location in any sequence was possible. Magnetic core memory was the standard form of [computer memory](/source/Computer_memory) until displaced by [semiconductor memory](/source/Semiconductor_memory) in [integrated circuits](/source/Integrated_circuit) (ICs) during the early 1970s.[10]

Prior to the development of integrated [read-only memory](/source/Read-only_memory) (ROM) circuits, *permanent* (or *read-only*) random-access memory was often constructed using [diode matrices](/source/Diode_matrix) driven by [address decoders](/source/Address_decoder), or specially wound [core rope memory](/source/Core_rope_memory) planes.[*[citation needed](https://en.wikipedia.org/wiki/Wikipedia:Citation_needed)*]

[Semiconductor memory](/source/Semiconductor_memory) appeared in the 1960s with bipolar memory, which used [bipolar transistors](/source/Bipolar_transistor). Although it was faster, it could not compete with the lower price of magnetic core memory.[11]

### MOS RAM

In 1957, Frosch and Derick manufactured the first silicon dioxide field-effect transistors at Bell Labs, the first transistors in which drain and source were adjacent at the surface.[12] Subsequently, in 1960, a team demonstrated a working [MOSFET](/source/MOSFET) at Bell Labs.[13][14] This led to the development of [metal–oxide–semiconductor](/source/Metal%E2%80%93oxide%E2%80%93semiconductor) (MOS) memory by John Schmidt at [Fairchild Semiconductor](/source/Fairchild_Semiconductor) in 1964.[10][15] In addition to higher speeds, MOS [semiconductor memory](/source/Semiconductor_memory) was cheaper and consumed less power than magnetic core memory.[10] The development of [silicon-gate](/source/Silicon-gate) [MOS integrated circuit](/source/MOS_integrated_circuit) (MOS IC) technology by [Federico Faggin](/source/Federico_Faggin) at Fairchild in 1968 enabled the production of MOS [memory chips](/source/Memory_chip).[16] MOS memory overtook magnetic core memory as the dominant memory technology in the early 1970s.[10]

Integrated bipolar [static random-access memory](/source/Static_random-access_memory) (SRAM) was invented by Robert H. Norman at [Fairchild Semiconductor](/source/Fairchild_Semiconductor) in 1963.[17] It was followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964.[10] SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data.[18] Commercial use of SRAM began in 1965, when [IBM](/source/IBM) introduced the SP95 memory chip for the [System/360 Model 95](/source/IBM_System%2F360).[11]

[Dynamic random-access memory](/source/Dynamic_random-access_memory) (DRAM) allowed replacement of a 4- or 6-transistor latch circuit by a single transistor for each memory bit, greatly increasing memory density at the cost of volatility. Data was stored in the tiny capacitance of each transistor and had to be periodically [refreshed](/source/Memory_refresh) every few milliseconds before the charge could leak away.

[Toshiba](/source/Toshiba)'s Toscal BC-1411 [electronic calculator](/source/Electronic_calculator), which was introduced in 1965,[19][20][21] used a form of capacitor bipolar DRAM, storing 180-bit data on discrete [memory cells](/source/Memory_cell_(computing)), consisting of [germanium](/source/Germanium) bipolar transistors and capacitors.[20][21] Capacitors had also been used for earlier memory schemes, such as the drum of the [Atanasoff–Berry Computer](/source/Atanasoff%E2%80%93Berry_Computer), the [Williams tube](/source/Williams_tube) and the [Selectron tube](/source/Selectron_tube). While it offered higher speeds than magnetic-core memory, bipolar DRAM could not compete with the lower price of the then-dominant magnetic-core memory.[22]

CMOS 1-[megabit](/source/Megabit) (Mbit) DRAM chip, one of the last models developed by [VEB](/source/Volkseigener_Betrieb) [Carl Zeiss](/source/Carl_Zeiss), in 1989

In 1966, [Robert Dennard](/source/Robert_Dennard), while examining the characteristics of MOS technology, found it was capable of building [capacitors](/source/Capacitor), and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, and the MOS transistor could control writing the charge to the capacitor. This led to his development of modern DRAM architecture for which there is a single MOS transistor per capacitor.[18] In 1967, Dennard filed a patent under IBM for a single-transistor DRAM memory cell, based on MOS technology.[18][23] The first commercial DRAM IC chip was the [Intel 1103](/source/Intel_1103), which was [manufactured](/source/Semiconductor_manufacturing_process) on an [8 μm](/source/10_%CE%BCm_process) MOS process with a capacity of 1 [kbit](/source/Kilobit), and was released in 1970.[10][24][25]

The earliest DRAMs were often synchronized with the CPU clock and were used with early microprocessors. In the mid-1970s, DRAMs moved to the asynchronous design, but in the 1990s returned to synchronous operation.[26][27] In 1992 Samsung released KM48SL2000, which had a capacity of 16 [Mbit](/source/Mbit).[28][29] The first commercial [double data rate](/source/Double_data_rate) SDRAM was Samsung's 64 Mbit [DDR SDRAM](/source/DDR_SDRAM), released in June 1998.[30] [GDDR](/source/GDDR) (graphics DDR) is a form of [SGRAM](/source/SGRAM) (synchronous graphics RAM), which was first released by Samsung as a 16 Mbit memory chip in 1998.[31]

## Types

In general, the term *RAM* refers solely to solid-state memory devices, and more specifically the main memory in most computers. The two widely used forms of modern RAM are [static RAM](/source/Static_RAM) (SRAM) and [dynamic RAM](/source/Dynamic_RAM) (DRAM). In SRAM, a bit of data is stored using the state of a [memory cell](/source/Memory_cell_(computing)), typically using six MOSFETs. This form of RAM is more expensive to produce, but is generally faster and requires less static power than DRAM. In modern computers, SRAM is often used as [cache memory for the CPU](/source/CPU_cache). DRAM stores a bit of data using a transistor and [capacitor](/source/Capacitor) pair (typically a MOSFET and [MOS capacitor](/source/MOS_capacitor), respectively),[32] which together comprise a DRAM cell. The capacitor holds a high or low charge (1 or 0, respectively), and the transistor acts as a switch that lets the control circuitry on the chip read the capacitor's state of charge or change it. As this form of memory is less expensive to produce than static RAM, it is the predominant form of computer memory used in modern computers.

Both static and dynamic RAM are considered *volatile*, as their state is lost when power is removed from the system. By contrast, [read-only memory](/source/Read-only_memory) (ROM) stores data by permanently enabling or disabling selected transistors, such that the memory cannot be altered. Writable variants of ROM (such as [EEPROM](/source/EEPROM) and [NOR flash](/source/NOR_flash)) share properties of both ROM and RAM, enabling data to [persist](/source/Persistence_(computer_science)) without power and to be updated without requiring special equipment.

[ECC memory](/source/ECC_memory) (which can be either SRAM or DRAM) includes special circuitry to detect and/or correct random faults (memory errors) in the stored data, using [parity bits](/source/Parity_bit) or [error correction codes](/source/Error_detection_and_correction#Error-correcting_code).

## Memory cell

Main article: [Memory cell (computing)](/source/Memory_cell_(computing))

The memory cell is the fundamental building block of [computer memory](/source/Computer_memory). The memory cell is an [electronic circuit](/source/Electronic_circuit) that stores one bit of binary information. The cell can be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.

In SRAM, the memory cell is a type of [flip-flop](/source/Flip-flop_(electronics)) circuit, usually implemented using [FETs](/source/FET). This means that SRAM requires very low power when not being accessed, but it is complex, expensive and has low storage density.

A second type, DRAM, is based around a capacitor. Charging and discharging this capacitor can store a 1 or a 0 in the cell. However, the charge in this capacitor slowly leaks away and must be refreshed periodically. Because of this refresh process, DRAM uses more power, but it can achieve greater storage densities and lower unit costs compared to SRAM.

SRAM cell (6 transistors) DRAM cell (1 transistor and one capacitor)

## Addressing

To be useful, memory cells must be readable and writable. Within the RAM device, [multiplexing and demultiplexing](/source/Multiplexer) circuitry is used to select memory cells. Typically, a RAM device has a set of address lines A 0 , A 1 , . . . A n {\displaystyle A_{0},A_{1},...A_{n}} , and for each combination of bits that may be applied to these lines, a set of memory cells are selected. Due to this addressing, RAM devices virtually always have a memory capacity that is a power of two.

Usually, several memory cells share the same address. For example, a 4-bit-wide RAM chip has four memory cells for each address. Often the width of the memory and that of the microprocessor are different; for a 32-bit microprocessor, eight 4-bit RAM chips would be needed.

Often, more addresses are needed than can be provided by a single device. In that case, multiple devices are used, with external multiplexors used to select the device assigned to a specific address range. RAM is often byte addressable, although word-addressable RAM also exists.[33][34]

## Memory hierarchy

Main article: [Memory hierarchy](/source/Memory_hierarchy)

Many computer systems have a memory hierarchy consisting of [processor registers](/source/Processor_register), on-[die](/source/Die_(integrated_circuit)) [SRAM](/source/Static_random-access_memory) caches, external [caches](/source/CPU_cache), [DRAM](/source/DRAM), [memory paging](/source/Memory_paging) systems and [virtual memory](/source/Virtual_memory) or [swap space](/source/Swap_space) on a [SSD](/source/SSD) or [hard drive](/source/Hard_drive). This entire pool of memory may be referred to as RAM from a programming perspective. The overall goal of using a memory hierarchy is to obtain the fastest possible average [access time](/source/Access_time) while minimizing the total cost of the entire memory system.

## Other uses of RAM

[File:Crucial 16GB DDR5 SODIMM Ram.jpg](https://en.wikipedia.org/wiki/Special:Upload?wpDestFile=Crucial_16GB_DDR5_SODIMM_Ram.jpg)
A Crucial [DDR5](/source/DDR5_SDRAM) 16GB [SO-DIMM](/source/SO-DIMM) stick of laptop RAM, roughly half the size of standard [DIMM](/source/DIMM) used in desktop computers

In addition to serving as temporary storage and working space for the operating system and applications, RAM is used in numerous other ways.

### Virtual memory

Main article: [Virtual memory](/source/Virtual_memory)

Most modern operating systems employ a method, known as virtual memory, of extending RAM capacity. A portion of the computer's [hard drive](/source/Hard_drive) or [SSD](/source/SSD) is set aside for a *paging file* or a *scratch partition*, and the combination of physical RAM and the paging file forms the system's total memory. For example, if a computer has 2 GB of RAM and a 1 GB page file, the operating system has 3 GB total memory available to it. When the system runs low on physical memory, it can swap portions of RAM to the paging file to make room for new data. When the previously swapped information is needed again, another swap is performed to read the information back into RAM. Excessive use of this mechanism results in [thrashing](/source/Thrashing_(computer_science)) and generally hampers overall system performance, mainly because hard drives are far slower than RAM.

### RAM disk

Main article: [RAM drive](/source/RAM_drive)

Software can *partition* a portion of a computer's RAM, allowing it to act as a much faster hard drive that is called a RAM drive. A RAM drive typically loses the stored data when the computer is shut down.[a]

### Shadow RAM

Sometimes, the contents of a relatively slow ROM chip are copied to RAM to allow for shorter access times. The ROM chip is then disabled while the initialized memory locations are switched in on the same block of addresses (often write-protected). This process, sometimes called *shadowing*, is fairly common in both computers and [embedded systems](/source/Embedded_systems).

As a common example, the [BIOS](/source/BIOS) in typical personal computers often has an option called "use shadow BIOS" or similar. When enabled, functions that rely on data from the BIOS's ROM instead use DRAM locations (most can also toggle shadowing of video card ROM or other ROM sections). Free memory is reduced by the size of the shadowed ROMs. Depending on the system, this may not result in increased performance and may cause incompatibilities. For example, some hardware may be inaccessible to the [operating system](/source/Operating_system) if shadow RAM is used. On some systems, the benefit may be hypothetical because the BIOS is not used after booting.[35]

### Virtual private networks

Some [virtual private network](/source/Virtual_private_network) services utilize RAM servers to keep all runtime state, including session metadata and cryptographic material, in [volatile memory](/source/Volatile_memory). This is intended to improve security relative to disk-backed designs.[36][37] In such a design, no data is written to hard drives; all information resides in volatile memory and is erased whenever the server is powered off or rebooted.[38]

## Memory wall

The **memory wall** is the growing disparity of speed between CPU and the response time of memory (known as [memory latency](/source/Memory_latency)) outside the CPU chip. An important reason for this disparity is the limited communication bandwidth beyond chip boundaries. From 1986 to 2000, [CPU](/source/CPU) speed improved at an annual rate of 55% while off-chip memory response time only improved at 10%. Given these trends, it was expected that memory latency would become an overwhelming [bottleneck](/source/Bottleneck_(engineering)) in computer performance.[39]

Another reason for the disparity is the enormous increase in the size of memory since the start of the PC revolution in the 1980s. Originally, PCs contained less than 1 [megabyte](/source/Megabyte) of RAM, which often had a response time of 1 CPU clock cycle, meaning that it required 0 [wait states](/source/Wait_state). Larger memory units are inherently slower than smaller ones of the same type, simply because it takes longer for signals to traverse a larger circuit. Constructing a memory unit of many gigabytes with a response time of one clock cycle is difficult or impossible. Modern CPUs often still have 0 wait state cache memory, but, due to the bandwidth limitations of chip-to-chip communication, it must reside on the same chip as the CPU cores. It must also be constructed from static RAM, which is far more expensive than the dynamic RAM used for larger memories.

CPU speed improvements slowed significantly, partly due to major physical barriers and partly because CPU designs have already hit the memory wall in some sense. [Intel](/source/Intel) summarized these causes in a 2005 document.[40]

First of all, as chip geometries shrink and clock frequencies rise, the transistor [leakage current](/source/Leakage_current) increases, leading to excess power consumption and heat... Secondly, the advantages of higher clock speeds are in part negated by memory latency, since memory access times have not been able to keep pace with increasing clock frequencies. Third, for certain applications, traditional serial architectures are becoming less efficient as processors get faster (due to the so-called [von Neumann bottleneck](/source/Von_Neumann_bottleneck)), further undercutting any gains that frequency increases might otherwise buy. In addition, partly due to limitations in the means of producing inductance within solid state devices, [resistance-capacitance](/source/RC_time_constant#Delay) (RC) delays in signal transmission are growing as feature sizes shrink, imposing an additional bottleneck that frequency increases don't address.

The RC delays in signal transmission were also noted in "Clock Rate versus IPC: The End of the Road for Conventional Microarchitectures"[41] which projected a maximum of 12.5% average annual CPU performance improvement between 2000 and 2014.

A different concept is the processor-memory performance gap, which can be addressed by [3D integrated circuits](/source/Three-dimensional_integrated_circuit) that reduce the distance between the control logic and memory cells that are further apart in a 2D chip.[42] Memory subsystem design requires a focus on the gap, which is widening over time.[43] The main method of bridging the gap is the use of [caches](/source/Cache_(computing)); small amounts of high-speed memory that houses data associated with recent operations near the processor, speeding up access to this data in cases where they are called upon frequently. Multiple levels of caching have been developed to deal with the widening gap, and the performance of high-speed modern computers relies on evolving caching techniques.[44] There can be up to a 53% difference between the growth in speed of processor and the lagging speed of main memory access.[45]

[Solid-state hard drives](/source/Solid-state_drive) have continued to increase in speed, from ~400 Mbit/s via [SATA3](/source/Serial_ATA) in 2012 up to ~7 GB/s via [NVMe](/source/NVMe)/[PCIe](/source/PCIe) in 2024, closing the gap between RAM and hard disk speeds, although RAM continues to be an order of magnitude faster, with single-lane [DDR5](/source/DDR5) 8000MHz capable of 128 GB/s, and modern [GDDR](/source/GDDR) even faster. Fast, cheap, [non-volatile](/source/Non-volatile) solid state drives have replaced some functions formerly performed by RAM, such as holding certain data for immediate availability in [server farms](/source/Server_farm) - 1 [terabyte](/source/Terabyte) of SSD storage can be had for $200, while 1 TB of RAM would cost thousands of dollars.[46][47]

## Timeline

See also: [Flash memory § Timeline](/source/Flash_memory#Timeline), [Read-only memory § Timeline](/source/Read-only_memory#Timeline), and [Transistor count § Memory](/source/Transistor_count#Memory)

### SRAM

Static random-access memory (SRAM) Date of introduction Chip name Capacity (bits) Access time SRAM type Manufacturer(s) Process MOSFET Ref March 1963 —N/a 1 ? Bipolar (cell) Fairchild —N/a —N/a [11] 1965 ? 8 ? Bipolar IBM ? —N/a SP95 16 ? Bipolar IBM ? —N/a [48] ? 64 ? MOSFET Fairchild ? PMOS [49] 1966 TMC3162 16 ? Bipolar (TTL) Transitron ? —N/a [10] ? ? ? MOSFET NEC ? ? [50] 1968 ? 64 ? MOSFET Fairchild ? PMOS [50] 144 ? MOSFET NEC ? NMOS 512 ? MOSFET IBM ? NMOS [49] 1969 ? 128 ? Bipolar IBM ? —N/a [11] 1101 256 850 ns MOSFET Intel 12,000 nm PMOS [51][52][53][54] 1972 2102 1 kbit ? MOSFET Intel ? NMOS [51] 1974 5101 1 kbit 800 ns MOSFET Intel ? CMOS [51][55] 2102A 1 kbit 350 ns MOSFET Intel ? NMOS (depletion) [51][56] 1975 2114 4 kbit 450 ns MOSFET Intel ? NMOS [51][55] 1976 2115 1 kbit 70 ns MOSFET Intel ? NMOS (HMOS) [51][52] 2147 4 kbit 55 ns MOSFET Intel ? NMOS (HMOS) [51][57] 1977 ? 4 kbit ? MOSFET Toshiba ? CMOS [52] 1978 HM6147 4 kbit 55 ns MOSFET Hitachi 3,000 nm CMOS (twin-well) [57] TMS4016 16 kbit ? MOSFET Texas Instruments ? NMOS [52] 1980 ? 16 kbit ? MOSFET Hitachi, Toshiba ? CMOS [58] 64 kbit ? MOSFET Matsushita 1981 ? 16 kbit ? MOSFET Texas Instruments 2,500 nm NMOS [58] October 1981 ? 4 kbit 18 ns MOSFET Matsushita, Toshiba 2,000 nm CMOS [59] 1982 ? 64 kbit ? MOSFET Intel 1,500 nm NMOS (HMOS) [58] February 1983 ? 64 kbit 50 ns MOSFET Mitsubishi ? CMOS [60] 1984 ? 256 kbit ? MOSFET Toshiba 1,200 nm CMOS [58][53] 1987 ? 1 Mbit ? MOSFET Sony, Hitachi, Mitsubishi, Toshiba ? CMOS [58] December 1987 ? 256 kbit 10 ns BiMOS Texas Instruments 800 nm BiCMOS [61] 1990 ? 4 Mbit 15–23 ns MOSFET NEC, Toshiba, Hitachi, Mitsubishi ? CMOS [58] 1992 ? 16 Mbit 12–15 ns MOSFET Fujitsu, NEC 400 nm December 1994 ? 512 kbit 2.5 ns MOSFET IBM ? CMOS (SOI) [62] 1995 ? 4 Mbit 6 ns Cache (SyncBurst) Hitachi 100 nm CMOS [63] 256 Mbit ? MOSFET Hyundai ? CMOS [64]

### DRAM

Dynamic random-access memory (DRAM) Date of introduction Chip name Capacity (bits) DRAM type Manufacturer(s) Process MOSFET Area Ref 1965 —N/a 1 bit DRAM (cell) Toshiba —N/a —N/a —N/a [20][21] 1967 —N/a 1 bit DRAM (cell) IBM —N/a MOS —N/a [23][50] 1968 ? 256 bit DRAM (IC) Fairchild ? PMOS ? [10] 1969 —N/a 1 bit DRAM (cell) Intel —N/a PMOS —N/a [50] 1970 1102 1 kbit DRAM (IC) Intel, Honeywell ? PMOS ? [50] 1103 1 kbit DRAM Intel 8,000 nm PMOS 10 mm2 [65][66][24] 1971 μPD403 1 kbit DRAM NEC ? NMOS ? [67] ? 2 kbit DRAM General Instrument ? PMOS 13 mm2 [68] 1972 2107 4 kbit DRAM Intel ? NMOS ? [51][69] 1973 ? 8 kbit DRAM IBM ? PMOS 19 mm2 [68] 1975 2116 16 kbit DRAM Intel ? NMOS ? [70][10] 1977 ? 64 kbit DRAM NTT ? NMOS 35 mm2 [68] 1979 MK4816 16 kbit PSRAM Mostek ? NMOS ? [71] ? 64 kbit DRAM Siemens ? VMOS 25 mm2 [68] 1980 ? 256 kbit DRAM NEC, NTT 1,000–1,500 nm NMOS 34–42 mm2 [68] 1981 ? 288 kbit DRAM IBM ? MOS 25 mm2 [72] 1983 ? 64 kbit DRAM Intel 1,500 nm CMOS 20 mm2 [68] 256 kbit DRAM NTT ? CMOS 31 mm2 January 5, 1984 ? 8 Mbit DRAM Hitachi ? MOS ? [73][74] February 1984 ? 1 Mbit DRAM Hitachi, NEC 1,000 nm NMOS 74–76 mm2 [68][75] NTT 800 nm CMOS 53 mm2 [68][75] 1984 TMS4161 64 kbit DPRAM (VRAM) Texas Instruments ? NMOS ? [76][77] January 1985 μPD41264 256 kbit DPRAM (VRAM) NEC ? NMOS ? [78][79] June 1986 ? 1 Mbit PSRAM Toshiba ? CMOS ? [80] 1986 ? 4 Mbit DRAM NEC 800 nm NMOS 99 mm2 [68] Texas Instruments, Toshiba 1,000 nm CMOS 100–137 mm2 1987 ? 16 Mbit DRAM NTT 700 nm CMOS 148 mm2 [68] October 1988 ? 512 kbit HSDRAM IBM 1,000 nm CMOS 78 mm2 [81] 1991 ? 64 Mbit DRAM Matsushita, Mitsubishi, Fujitsu, Toshiba 400 nm CMOS ? [58] 1993 ? 256 Mbit DRAM Hitachi, NEC 250 nm CMOS ? 1995 ? 4 Mbit DPRAM (VRAM) Hitachi ? CMOS ? [63] January 9, 1995 ? 1 Gbit DRAM NEC 250 nm CMOS ? [82][63] Hitachi 160 nm CMOS ? 1996 ? 4 Mbit FRAM Samsung ? NMOS ? [83] 1997 ? 4 Gbit QLC NEC 150 nm CMOS ? [58] 1998 ? 4 Gbit DRAM Hyundai ? CMOS ? [64] February 2001 ? 4 Gbit DRAM Samsung 100 nm CMOS ? [58][84] June 2001 TC51W3216XB 32 Mbit PSRAM Toshiba ? CMOS ? [85]

### SDRAM

Part of this section is [transcluded](https://en.wikipedia.org/wiki/Help:Transclusion) from [Synchronous dynamic random-access memory](/source/Synchronous_dynamic_random-access_memory). ([edit](https://en.wikipedia.org/w/index.php?title=Synchronous_dynamic_random-access_memory&action=edit) | [history](https://en.wikipedia.org/w/index.php?title=Synchronous_dynamic_random-access_memory&action=history))

Synchronous dynamic random-access memory (SDRAM) Date of intro- duction Chip name Capacity (bits)[86] SDRAM type Manufac- turer(s) Pro- cess MOS- FET Area (mm2) Ref 1992 KM48SL2000 16 Mbit SDR Samsung ? CMOS ? [87][28] 1996 MSM5718C50 18 Mbit RDRAM Oki ? CMOS 325 [88] N64 RDRAM 36 Mbit RDRAM NEC ? CMOS ? [89] ? 1024 Mbit SDR Mitsubishi 150 nm CMOS ? [90] 1997 ? 1024 Mbit SDR Hyundai ? SOI ? [91] 1998 MD5764802 64 Mbit RDRAM Oki ? CMOS 325 [88] Mar 1998 Direct RDRAM 72 Mbit RDRAM Rambus ? CMOS ? [92] Jun 1998 ? 64 Mbit DDR Samsung ? CMOS ? [93][94][95] 1998 ? 64 Mbit DDR Hyundai ? CMOS ? [91] 128 Mbit SDR Samsung ? CMOS ? [96][94] 1999 ? 128 Mbit DDR Samsung ? CMOS ? [94] 1024 Mbit DDR Samsung 140 nm CMOS ? [90] 2000 GS eDRAM 32 Mbit eDRAM Sony, Toshiba 180 nm CMOS 279 [97] 2001 ? 288 Mbit RDRAM Hynix ? CMOS ? [98] ? DDR2 Samsung 100 nm CMOS ? [95][90] 2002 ? 256 Mbit SDR Hynix ? CMOS ? [98] 2003 EE+GS eDRAM 32 Mbit eDRAM Sony, Toshiba 90 nm CMOS 086 [97] ? 72 Mbit DDR3 Samsung 90 nm CMOS ? [99] 512 Mbit DDR2 Hynix ? CMOS ? [98] Elpida 110 nm CMOS ? [100] 1024 Mbit DDR2 Hynix ? CMOS ? [98] 2004 ? 2048 Mbit DDR2 Samsung 80 nm CMOS ? [101] 2005 EE+GS eDRAM 32 Mbit eDRAM Sony, Toshiba 65 nm CMOS 086 [102] Xenos eDRAM 80 Mbit eDRAM NEC 90 nm CMOS ? [103] ? 512 Mbit DDR3 Samsung 80 nm CMOS ? [95][104] 2006 ? 1024 Mbit DDR2 Hynix 60 nm CMOS ? [98] 2008 ? ? LPDDR2 Hynix ? Apr 2008 ? 8192 Mbit DDR3 Samsung 50 nm CMOS ? [105] 2008 ? 16384 Mbit DDR3 Samsung 50 nm CMOS ? 2009 ? ? DDR3 Hynix 44 nm CMOS ? [98] 2048 Mbit DDR3 Hynix 40 nm 2011 ? 16384 Mbit DDR3 Hynix 40 nm CMOS ? [106] 2048 Mbit DDR4 Hynix 30 nm CMOS ? [106] 2013 ? ? LPDDR4 Samsung 20 nm CMOS ? [106] 2014 ? 8192 Mbit LPDDR4 Samsung 20 nm CMOS ? [107] 2015 ? 12 Gbit LPDDR4 Samsung 20 nm CMOS ? [96] 2018 ? 8192 Mbit LPDDR5 Samsung 10 nm FinFET ? [108] 128 Gbit DDR4 Samsung 10 nm FinFET ? [109]

### SGRAM

Synchronous graphics random-access memory (SGRAM) Date of introduction Chip name Capacity (bits)[86] SDRAM type Manufacturer(s) Process MOSFET Area Ref November 1994 HM5283206 8 Mbit SGRAM (SDR) Hitachi 350 nm CMOS 58 mm2 [110][111] December 1994 μPD481850 8 Mbit SGRAM (SDR) NEC ? CMOS 280 mm2 [112][113] 1997 μPD4811650 16 Mbit SGRAM (SDR) NEC 350 nm CMOS 280 mm2 [114][115] September 1998 ? 16 Mbit SGRAM (GDDR) Samsung ? CMOS ? [93] 1999 KM4132G112 32 Mbit SGRAM (SDR) Samsung ? CMOS 280 mm2 [116] 2002 ? 128 Mbit SGRAM (GDDR2) Samsung ? CMOS ? [117] 2003 ? 256 Mbit SGRAM (GDDR2) Samsung ? CMOS ? [117] SGRAM (GDDR3) March 2005 K4D553238F 256 Mbit SGRAM (GDDR) Samsung ? CMOS 77 mm2 [118] October 2005 ? 256 Mbit SGRAM (GDDR4) Samsung ? CMOS ? [119] 2005 ? 512 Mbit SGRAM (GDDR4) Hynix ? CMOS ? [98] 2007 ? 1024 Mbit SGRAM (GDDR5) Hynix 60 nm 2009 ? 2048 Mbit SGRAM (GDDR5) Hynix 40 nm 2010 K4W1G1646G 1024 Mbit SGRAM (GDDR3) Samsung ? CMOS 100 mm2 [120] 2012 ? 4096 Mbit SGRAM (GDDR3) SK Hynix ? CMOS ? [106] March 2016 MT58K256M32JA 8 Gbit SGRAM (GDDR5X) Micron 20 nm CMOS 140 mm2 [121] January 2018 K4ZAF325BM 16 Gbit SGRAM (GDDR6) Samsung 10 nm FinFET 225 mm2 [122][123][124]

## Notes

1. **[^](#cite_ref-35)** Contents can be retained if memory is arranged to have a standby battery source, or changes to the RAM drive are written out to a nonvolatile disk before power down, in which case, RAM drive contents are reloaded from disk upon RAM drive initialization.

## See also

- [CAS latency](/source/CAS_latency) (CL)

- [Chip creep](/source/Chip_creep)

- [Electrochemical RAM](/source/Electrochemical_RAM)

- [Hybrid Memory Cube](/source/Hybrid_Memory_Cube)

- [List of RAM chip manufacturers](/source/List_of_computer_hardware_manufacturers#Random-access_memory_(RAM)_chips)

- [List of RAM module manufacturers](/source/List_of_computer_hardware_manufacturers#Random-access_memory_(RAM)_modules)

- [Memory geometry](/source/Memory_geometry)

- [Memory module](/source/Memory_module)

- [Multi-channel memory architecture](/source/Multi-channel_memory_architecture)

- [RAM parity](/source/RAM_parity)

- [Read-mostly memory](/source/Read-mostly_memory) (RMM)

- [Regenerative capacitor memory](/source/Regenerative_capacitor_memory)

- [Registered/buffered memory](/source/Registered_memory)

- [Technology portal](https://en.wikipedia.org/wiki/Portal:Technology)

## References

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## External links

- Media related to [RAM](https://commons.wikimedia.org/wiki/RAM) at Wikimedia Commons

v t e Basic computer components Input devices Pointing devices Graphics tablet Game controller Light pen Mouse Optical Optical trackpad Pointing stick Touchpad Touchscreen Trackball Other Keyboard Image scanner Graphics card GPU Microphone Refreshable braille display Sound card Sound chip Webcam Softcam Output devices Monitor Screen Refreshable braille display Printer Plotter Speakers Sound card Graphics card Removable data storage Disk pack Floppy disk Optical disc CD DVD Blu-ray Flash memory Memory card USB flash drive Computer case Central processing unit Microprocessor Motherboard Memory RAM BIOS Data storage HDD SSD (SATA / NVMe) SSHD Power supply SMPS MOSFET Power MOSFET VRM Network interface controller Fax modem Expansion card Ports Current Ethernet USB Thunderbolt Analog audio jack DisplayPort HDMI Obsolete FireWire (IEEE 1394) Parallel port Serial port Game port PS/2 port eSATA DVI VGA Related History of computing hardware History of computing hardware (1960s–present) List of pioneers in computer science

Authority control databases International GND National United States Israel Other Yale LUX

---
Adapted from the Wikipedia article [Random-access memory](https://en.wikipedia.org/wiki/Random-access_memory) by Wikipedia contributors ([contributor history](https://en.wikipedia.org/wiki/Random-access_memory?action=history)). Available under [Creative Commons Attribution-ShareAlike 4.0 International](https://creativecommons.org/licenses/by-sa/4.0/). Changes may have been made.