# Parasitic structure

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{{Short description|Type of semiconductor device failure}}
{{No footnotes|date=October 2016}}

In a [semiconductor device](/source/semiconductor_device), a '''parasitic structure''' is a portion of the device that resembles in structure some other, simpler semiconductor device, and causes the device to enter an unintended mode of operation when subjected to conditions outside of its normal range.{{Citation needed|date=August 2009}}  For example, the internal structure of an NPN [bipolar transistor](/source/Bipolar_junction_transistor) resembles two [P-N](/source/P%E2%80%93n_junction) junction [diode](/source/diode)s connected together by a common [anode](/source/anode).  In normal operation the base-emitter junction does indeed form a diode, but in most cases it is undesirable for the base-collector junction to behave as a diode.  If a sufficient [forward bias](/source/P-n_junction) is placed on this junction it will form a parasitic diode structure, and current will flow from base to collector.

A common parasitic structure {{Clarification needed|reason=Is the whole SCR a parasitic structure or just part of it?|date=June 2025|text=is that of a}} [silicon controlled rectifier](/source/silicon_controlled_rectifier) (SCR).  Once triggered, an SCR [conducts](/source/Electrical_conduction) for as long as there is a current, necessitating a complete power-down to reset the behavior of the device.  This condition is known as [latchup](/source/latchup).{{Citation needed|date=August 2009}}

==References==
{{reflist}}
{{refbegin}}
* {{cite book | last=Panagopoulos | first=A. D. | title=Handbook of Research on Next Generation Mobile Communication Systems | publisher=IGI Global | series=Advances in Wireless Technologies and Telecommunication | year=2015 | isbn=978-1-4666-8733-2 | url=https://books.google.com/books?id=Tgx4CgAAQBAJ&pg=PA57 | pages=57–58}}
{{refend}}

{{DEFAULTSORT:Parasitic Structure}}
Category:Electrical circuits

{{electronics-stub}}

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