# Indium gallium phosphide

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**Indium gallium phosphide** (**InGaP**), also called gallium indium phosphide (GaInP), is a [semiconductor](/source/Semiconductor) composed of [indium](/source/Indium), [gallium](/source/Gallium) and [phosphorus](/source/Phosphorus). It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors [silicon](/source/Silicon) and [gallium arsenide](/source/Gallium_arsenide).

It is used mainly in [HEMT](/source/HEMT) and [HBT](/source/Heterojunction_bipolar_transistor) structures, but also for the fabrication of high efficiency [solar cells](/source/Solar_cells) used for space applications and, in combination with [aluminium](/source/Aluminium) ([AlGaInP](/source/Aluminium_gallium_indium_phosphide) alloy) to make high brightness [LEDs](/source/LED) with orange-red, orange, yellow, and green colors. Some semiconductor devices such as EFluor Nanocrystal use InGaP as their core particle.

Indium gallium phosphide is a solid solution of [indium phosphide](/source/Indium_phosphide) and [gallium phosphide](/source/Gallium_phosphide).

Ga0.5In0.5P is a solid solution of special importance, which is almost lattice matched to [GaAs](/source/GaAs). This allows, in combination with (AlxGa1−x)0.5In0.5, the growth of [lattice matched](/source/Lattice_constant) [quantum wells](/source/Quantum_well) for red emitting [semiconductor lasers](/source/Laser_diode), e.g., [red](/source/Red) [emitting](/source/Solid-state_lighting) (650[nm](/source/1_E-9_m)) [RCLEDs](https://en.wikipedia.org/w/index.php?title=RCLED&action=edit&redlink=1) or [VCSELs](/source/VCSEL) for [PMMA](/source/Poly(methyl_methacrylate)) [plastic](/source/Plastic) [optical fibers](/source/Optical_fiber).

Ga0.5In0.5P is used as the high energy junction on double and triple junction photovoltaic cells grown on [GaAs](/source/GaAs). Recent years have shown GaInP/GaAs tandem solar cells with AM0 (sunlight incidence in space = 1.35 kW/m2) efficiencies in excess of 25%.[1]

A different composition of GaInP, lattice matched to the underlying [GaInAs](/source/GaInAs), is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells.

Growth of GaInP by [epitaxy](/source/Epitaxy) can be complicated by the tendency of GaInP to grow as an ordered material, rather than a truly random solid solution (i.e., a mixture). This changes the bandgap and the electronic and optical properties of the material.

## See also

- [Gallium phosphide](/source/Gallium_phosphide)

- [Indium(III) phosphide](/source/Indium(III)_phosphide)

- [Indium gallium nitride](/source/Indium_gallium_nitride)

- [Indium gallium arsenide](/source/Indium_gallium_arsenide)

- [GaInP/GaAs solar cell](https://en.wikipedia.org/w/index.php?title=GaInP/GaAs_solar_cell&action=edit&redlink=1)

## References

1. **[^](#cite_ref-1)** Alex Freundlich. ["Multi-Quantum Well Tandem Solar Cells"](https://web.archive.org/web/20090510015749/http://www.cam.uh.edu/MQW%20tech%202p.php). University of Houston Center for Advanced Materials. Archived from [the original](http://www.cam.uh.edu/MQW%20tech%202p.php) on 2009-05-10. Retrieved 2008-11-14.

- E.F. Schubert "Light emitting diodes", [ISBN](/source/ISBN_(identifier)) [0-521-53351-1](https://en.wikipedia.org/wiki/Special:BookSources/0-521-53351-1)

## External links

- [EMCORE Solar Cells](https://web.archive.org/web/20071015042018/http://www.emcore.com/product/adv_triple_junction.php)

- [Spectrolab Solar Cells](https://web.archive.org/web/20071213024152/http://www.spectrolab.com/prd/space/cell-main.asp)

- [NSM Archive](http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaInP/index.html) [Archived](https://web.archive.org/web/20151019085250/http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaInP/index.html) 2015-10-19 at the [Wayback Machine](/source/Wayback_Machine)

v t e Gallium compounds Gallium(−V) Mg5Ga2 Gallium(I) Ga2O GaCl GaBr GaI Gallium(II) GaS GaSe GaTe Gallium(I,III) GaCl2 Gallium(III) GaAs GaH3 Ga2H6 GaBr3 GaCl3 GaF3 GaI3 GaN Ga(OH)3 Ga(CN)3 Ga(NO3)3 Ga2(SO4)3 GaPO4 GaP GaSb Ga2O3 Ga2S3 Ga2Se3 Ga(CH3COO)3 Ga2Te3 Organogallium(III) compounds Ga(C5H7O2)3 Ga(CH3)3 Ga(C2H5)3

v t e Phosphides Binary phosphides PH3 He Li3P Be BP CP +C N +O F Ne Na3P Mg3P2 MgP4 AlP +Si -SiP P S +Cl Ar K3P CaP Ca3P2 ScP TiP V CrP Cr3P Mn FeP Fe3P CoP Co2P Co3P2 NixPy Cu3P Zn3P2 ZnP2 GaP -GeP AsP Se4P4 Se3P4 +Br Kr Rb2P5 Sr3P2 YP ZrP ZrP2 NbP MoP MoP2 Mo3P Tc Ru2P Rh Pd Ag3P Cd3P2 InP SnP3 SbP +Te +I Xe CsxPy Ba3P2 * LuP HfP Ta W Re2P ReP Re3P4 ReP2 ReP3 OsP2 Ir PtP2 Au2P3 Hg Tl PbP7 BiP Po At Rn Fr Ra ** Lr Rf Db Sg Bh Hs Mt Ds Rg Cn Nh Fl Mc Lv Ts Og ↓ * LaP CeP PrP PrP5 NdP Pm SmP SmP5 EuP GdP TbP DyP HoP ErP TmP YbP ** AcP ThP7 Pa UP NpP Np3P4 PuP Am Cm BkP Cf Es Fm Md No Ternary phosphides GaInP GaAsP AlGaP Quaternary phosphides Zn-Cd-P-As InAsSbP AlGaInP Quinary phosphides GaInAsSbP See also Ferrophosphorus

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