# Gallium arsenide antimonide

> Mediated Wiki article. Canonical URL: https://mediated.wiki/source/Gallium_arsenide_antimonide
> Markdown URL: https://mediated.wiki/source/Gallium_arsenide_antimonide.md
> Source: https://en.wikipedia.org/wiki/Gallium_arsenide_antimonide
> Source revision: 1338921037
> License: Creative Commons Attribution-ShareAlike 4.0 International (https://creativecommons.org/licenses/by-sa/4.0/)

Gallium arsenide antimonide Identifiers 3D model (JSmol) GaAs0.5Sb0.5: Interactive image InChI InChI=1S/AsH2.2Ga.Sb.6H/h1H2;;;;;;;;; Key: MIEVXBWDYAIMDS-UHFFFAOYSA-N SMILES GaAs0.5Sb0.5: [Ga].[Ga].[As].[Sb] Related compounds Related compounds Gallium arsenide; Gallium antimonide; Gallium indium arsenide antimonide phosphide Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Infobox references

Chemical compound

**Gallium arsenide antimonide**, also known as **gallium antimonide arsenide** or **GaAsSb** ([Ga](/source/Gallium)[As](/source/Arsenic)(1-*x*)[Sb](/source/Antimony)*x*), is a ternary [III-V semiconductor](/source/III-V) compound; *x* indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of [gallium arsenide](/source/Gallium_arsenide) (GaAs) and [gallium antimonide](/source/Gallium_antimonide) (GaSb).

## Preparation

GaAsSb films have been grown by [molecular beam epitaxy](/source/Molecular_beam_epitaxy) (MBE), [metalorganic vapor phase epitaxy](/source/Metalorganic_vapor_phase_epitaxy) (MOVPE) and [liquid phase epitaxy](/source/Liquid_phase_epitaxy) (LPE) on [gallium arsenide](/source/Gallium_arsenide), [gallium antimonide](/source/Gallium_antimonide) and [indium phosphide](/source/Indium_phosphide) substrates. It is often incorporated into layered heterostructures with other III-V compounds.

### Thermodynamic Stability

GaAsSb has a [miscibility gap](/source/Miscibility_gap) at temperatures below 751 °C.[1] This means that intermediate compositions of the alloy below this temperature are thermodynamically unstable and can spontaneously separate into two phases: one GaAs-rich and one GaSb-rich. This limits the compositions of GaAsSb that can be obtained by near-equilibrium growth techniques, such as LPE, to those outside of the miscibility gap.[2] However, compositions of GaAsSb within the miscibility gap can be obtained with non-equilibrium growth techniques, such as MBE and MOVPE. By carefully selecting the growth conditions (e.g., the ratios of precursor gases in MOVPE) and maintaining relatively low temperatures during and after growth, it is possible to obtain compositions of GaAsSb within the miscibility gap that are [kinetically stable](/source/Metastability). For example, this makes it possible to grow GaAsSb with the composition GaAs0.51Sb0.49, which, while normally within the miscibility gap at typical growth temperatures, can exist as a kinetically stable alloy.[1] This composition of GaAsSb is latticed matched to [InP](/source/InP) and is sometimes used in heterostructures grown on that substrate.

## Electronic Properties

Direct bandgap versus composition for GaAsSb.[1]

The [bandgap](/source/Bandgap) and lattice constant of GaAsSb alloys are between those of pure GaAs (a = 0.565 nm, Eg = 1.42 [eV](/source/Electronvolt)) and GaSb (a = 0.610 nm, Eg = 0.73 eV).[3] Over all compositions, the band gap is [direct](/source/Direct_bandgap), like in GaAs and GaSb. Furthermore, the bandgap displays a minimum in composition at approximately x = 0.8 at T = 300 K, reaching a minimum value of Eg = 0.67 eV, which is slightly below that of pure GaSb.[1]

## Applications

GaAsSb has been extensively studied for use in [heterojunction bipolar transistors](/source/Heterojunction_bipolar_transistor).[4][5] It has also been lattice-matched with [InGaAs](/source/InGaAs) on [InP](/source/InP) to create and study a [two-dimensional electron gas](/source/Two-dimensional_electron_gas).[6]

A GaAsSb/GaAs-based heterostructure was used to make a near-infrared [photodiode](/source/Photodiode) with peak responsivity centered at 1.3 μm.[7]

GaAsSb can be incorporated into III-V–based [multi-junction solar cells](/source/Multi-junction_solar_cell) to reduce the tunneling distance and increase the tunneling current between adjacent cells.[8]

## References

1. ^ [***a***](#cite_ref-MOVPE1_1-0) [***b***](#cite_ref-MOVPE1_1-1) [***c***](#cite_ref-MOVPE1_1-2) [***d***](#cite_ref-MOVPE1_1-3) Cherng, M. J.; Stringfellow, G. G.; Cohen, R. M. (1984). "Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5". *Applied Physics Letters*. **44** (7): 677–679. [Bibcode](/source/Bibcode_(identifier)):[1984ApPhL..44..677C](https://ui.adsabs.harvard.edu/abs/1984ApPhL..44..677C). [doi](/source/Doi_(identifier)):[10.1063/1.94874](https://doi.org/10.1063%2F1.94874).

1. **[^](#cite_ref-2)** Madelung, O.; Rössler, U.; Schulz, M., eds. (2002). ["GaAs(1-x)Sb(x), physical properties"](http://materials.springer.com/lb/docs/sm_lbs_978-3-540-31356-4_25). *Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties*. Landolt-Börnstein - Group III Condensed Matter. Vol. b. Springer-Verlag. pp. 1–13. [doi](/source/Doi_(identifier)):[10.1007/10832182_25](https://doi.org/10.1007%2F10832182_25). [ISBN](/source/ISBN_(identifier)) [978-3-540-42876-3](https://en.wikipedia.org/wiki/Special:BookSources/978-3-540-42876-3).

1. **[^](#cite_ref-VMR_3-0)** Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R. (2001). "Band parameters for III–V compound semiconductors and their alloys". *Journal of Applied Physics*. **89** (11): 5815–5875. [Bibcode](/source/Bibcode_(identifier)):[2001JAP....89.5815V](https://ui.adsabs.harvard.edu/abs/2001JAP....89.5815V). [doi](/source/Doi_(identifier)):[10.1063/1.1368156](https://doi.org/10.1063%2F1.1368156).

1. **[^](#cite_ref-4)** Bolognesi, C. R.; Dvorak, M. M. W.; Yeo, P.; Xu, X. G.; Watkins, S. P. (2001). "InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs". *IEEE Transactions on Electron Devices*. **48** (11): 2631–2639. [Bibcode](/source/Bibcode_(identifier)):[2001ITED...48.2631B](https://ui.adsabs.harvard.edu/abs/2001ITED...48.2631B). [doi](/source/Doi_(identifier)):[10.1109/16.960389](https://doi.org/10.1109%2F16.960389).

1. **[^](#cite_ref-5)** Ikossi-Anastasiou, K. (1993). "GaAsSb for heterojunction bipolar transistors". *IEEE Transactions on Electron Devices*. **40** (5): 878–884. [Bibcode](/source/Bibcode_(identifier)):[1993ITED...40..878I](https://ui.adsabs.harvard.edu/abs/1993ITED...40..878I). [doi](/source/Doi_(identifier)):[10.1109/16.210193](https://doi.org/10.1109%2F16.210193).

1. **[^](#cite_ref-6)** Detz, H.; Silvano De Sousa, J.; Leonhardt, H.; Klang, P.; Zederbauer, T.; Andrews, A. M.; Schrenk, W.; Smoliner, J.; Strasser, G. (2014). ["InGaAs/GaAsSb based two-dimensional electron gases"](https://doi.org/10.1116%2F1.4863299). *Journal of Vacuum Science & Technology B*. **32** (2) 02C104. [Bibcode](/source/Bibcode_(identifier)):[2014JVSTB..32bC104D](https://ui.adsabs.harvard.edu/abs/2014JVSTB..32bC104D). [doi](/source/Doi_(identifier)):[10.1116/1.4863299](https://doi.org/10.1116%2F1.4863299).

1. **[^](#cite_ref-7)** Sun, X.; Wang, S.; Hsu, J. S.; Sidhu, R.; Zheng, X. G.; Li, X.; Campbell, J. C.; Holmes, A. L. (2002). "GaAsSb: a novel material for near infrared photodetectors on GaAs substrates". *IEEE Journal of Selected Topics in Quantum Electronics*. **8** (4): 817–822. [Bibcode](/source/Bibcode_(identifier)):[2002IJSTQ...8..817S](https://ui.adsabs.harvard.edu/abs/2002IJSTQ...8..817S). [doi](/source/Doi_(identifier)):[10.1109/JSTQE.2002.800848](https://doi.org/10.1109%2FJSTQE.2002.800848). [ISSN](/source/ISSN_(identifier)) [1558-4542](https://search.worldcat.org/issn/1558-4542).

1. **[^](#cite_ref-8)** Klem, J. F.; Zolper, J. C. (1997), [*Semiconductor tunnel junction with enhancement layer*](https://patents.google.com/patent/US5679963/en), retrieved 27 December 2023.

## External links

- [Properties of GaAsSb](https://www.ioffe.ru/SVA/NSM/Semicond/GaAsSb/)

v t e Salts and covalent derivatives of the antimonide ion -SbH SbH3 +H He Li3Sb Be ?BSb R3Sb SbN -SbO various -SbF4 -SbF6 Ne Na3Sb NaSb3 Mg3Sb2 AlSb Si +P +S -SbS3 -SbS4 +Cl4 +Cl2 -SbCl6 Ar K3Sb Ca ScSb Ti V CrSb MnSb Mn2Sb Fe2Sb FeSb2 CoSb CoSb3 NiSb Ni3Sb NiSb2 CuSb Cu2Sb Cu3Sb Cu5Sb ZnSb Zn3Sb2 Zn4Sb3 GaSb GeSb AsSb -As1-xSbx +Se +Br +Br2 Kr Rb3Sb RbSb3 SrSb3 YSb ZrSb Nb3Sb Mo Tc Ru RhSb various Ag1-xSbx Ag3Sb CdSb Cd3Sb2 InSb SnSb Sb Sb4 -Sb +Te +I Xe Cs3Sb Cs4Sb2 Ba3Sb2 BaSb3 * LuSb ?HfSb ?TaSb W Re Os Ir PtSb Pt3Sb PtSb2 Pt4Sb3 AuSb AuSb2 Hg TlSb PbSb BiSb Bi1−xSbx Bi2Sb2 Po At Rn Fr3Sb Ra ** Lr Rf Db Sg Bh Hs Mt Ds Rg Cn Nh Fl Mc Lv Ts Og * LaSb ?CeSb PrSb NdSb PmSb SmSb Eu5Sb3 Eu11Sb10 Eu2Sb3 GdSb TbSb DySb HoSb HoSb2 ErSb TmSb Tm+3Sb YbSb ** Ac ?ThSb ThSb2 Th3Sb4 Pa U NpSb Pu AmSb CmSb BkSb ?Bk+3Sb Cf Es Fm Md No

v t e Gallium compounds Gallium(−V) Mg5Ga2 Gallium(I) Ga2O GaCl GaBr GaI Gallium(II) GaS GaSe GaTe Gallium(I,III) GaCl2 Gallium(III) GaAs GaH3 Ga2H6 GaBr3 GaCl3 GaF3 GaI3 GaN Ga(OH)3 Ga(CN)3 Ga(NO3)3 Ga2(SO4)3 GaPO4 GaP GaSb Ga2O3 Ga2S3 Ga2Se3 Ga(CH3COO)3 Ga2Te3 Organogallium(III) compounds Ga(C5H7O2)3 Ga(CH3)3 Ga(C2H5)3

v t e Arsenides Binary arsenides AsH3 +H He LiAs Be BAs C +N +O F Ne Na3As Mg AlAs -Si P S +Cl Ar K CaAs Sc Ti V Cr MnAs Fe CoAs Ni Cu Zn3As2 GaAs -Ge As Se +Br Kr Rb Sr YAs Zr Nb MoAs2 Tc Ru Rh PdAs2 Ag Cd3As2 InAs -Sn Sb +Te +I Xe Cs Ba * Lu Hf TaAs WAs2 Re Os Ir Pt Au Hg Tl Pb BiAs Po At Rn Fr Ra ** Lr Rf Db Sg Bh Hs Mt Ds Rg Cn Nh Fl Mc Lv Ts Og ↓ * La Ce PrAs Nd Pm SmAs Eu Gd Tb DyAs HoAs Er Tm Yb ** Ac Th Pa U NpAs NpAs2 PuAs Am Cm Bk Cf Es Fm Md No Ternary arsenides AlGaAs AlInAs AlAsSb GaAsP GaAsSb (Ga,Mn)As InAsSb Quaternary arsenides Zn-Cd-P-As InAsSbP Quinary arsenides GaInAsSbP See also Oxyarsenides

v t e Antimony compounds Antimonides AlSb Bi1-xSbx DySb GaSb HoSb HoSb2 InSb PrSb SmSb YSb ZnSb Sb(III) SbBr3 Sb(C2H3O2)3 SbCl3 SbF3 Sb4O4(OH)2(NO3)2 SbH3 SbI3 SbN Sb2O3 Sb2S3 Sb2(SO4)3 Sb2Se3 Sb2Te3 Organoantimony(III) compounds Sb(CH3)3 Sb(C6H5)3 Sb(III,V) Sb2O4 Sb(V) SbCl5 SbF5 Sb2O5 Sb2S5 Organoantimony(V) compounds Sb(CH3)5 Sb(C6H5)5

---
Adapted from the Wikipedia article [Gallium arsenide antimonide](https://en.wikipedia.org/wiki/Gallium_arsenide_antimonide) by Wikipedia contributors ([contributor history](https://en.wikipedia.org/wiki/Gallium_arsenide_antimonide?action=history)). Available under [Creative Commons Attribution-ShareAlike 4.0 International](https://creativecommons.org/licenses/by-sa/4.0/). Changes may have been made.